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| SS12B thru SS110B SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES For surface mounted applications Metal-Semiconductor junction with guarding Epitaxial construction Very low forward votage drop High current capability REVERSE VOLTAGE - 20 to 100 Volts FORWARD CURRENT - 1.0 Amperes SMB .083(2.11) .075(1.91) .155(3.94) .130(3.30) Plastic material has UL flammability classification 94V-0 For use in low voltage, high frequency inverters, .185(4.70) .160(4.06) .012(.305) .006(.152) .096(2.44) .084(2.13) .060(1.52) .030(0.76) .008(.203) .002(.051) free wheeling, and polarity protection applications. MECHANICAL DATA Case Molded Plastic Polarity:Color band denotes cathode Weight: 0.003 ounces,0.093 grams Mounting position: Any .220(5.59) .200(5.08) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surage Current 8.3ms Single Half Sine-Wave Super Imposed On Rated Load (JEDEC Method) Maximum Forward Voltage at 1.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Operating Temperature Range Storage Temperature Range @TJ=25 @TJ=100 @TL=100 SYMBOL VRRM VRMS VDC I(AV) SS12B 20 14 20 SS13B 30 21 30 SS14B 40 28 40 SS15B 50 35 50 1.0 SS16B 60 42 60 SS18B 80 56 80 SS110B 100 70 100 UNIT V V V A IFSM VF IR CJ RJL TJ TSTG 0.45 0.55 0.6 40 0.70 1.0 10 110 20 -55 to + 150 -55 to + 150 0.85 A V mA pF /W NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 2.Thermal resistance junction to lead. ~ 151 ~ RATING AND CHARACTERTIC CURVES SS12B thru SS110B FIG. 2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, (AMPERES 40 FIG. 1 - FORWARD CURRENT DERATING CURVE 1.00 AVERAGE FORWARD CURRENT AMPERES 0.75 30 0.5 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 20 0.25 10 PULSE WIDTH 8.3mS SINGLE HALF-SINE-WAVE (JEDEC METHOD) 0 25 50 75 100 125 150 175 LEAD TEMPERATURE FIG.3-TYPICAL FORWARD CHARACTERISTICS 20 SS12B SS13B 0 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL JUNCTION CAPACITANCE 1000 INSTANTANEOUS FORWARD CURRENT, (A) 10 SS14B CAPACITANCE PF SS15B-SS16B SS18B-SS110B 100 1.0 TJ = 25C PULSE WIDTH 300us 1% DUTY CYCLE TJ=25 f=1MHZ 10 0.1 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 0.1 1.0 4.0 10.0 100 INSTANTANEOUS FORWARD VOLTAGE, (VOLTS) REVERSE VOLTAGE,VOLTS FIG.5-TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT, (mA ) 10 T J=125 T J=100 1.0 0.1 0.01 T J=25 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) ~ 152 ~ |
Price & Availability of SS12B-SS110B
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